Title :
Low-temperature germanium ultra-high vacuum chemical vapor deposition for back-end photonic integration
Author :
McComber, Kevin A. ; Liu, Jifeng ; Michel, Jurgen ; Kimerling, Lionel C.
Author_Institution :
Dept. of Mater. Sci. & Eng., Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
Polycrystalline germanium (poly-Ge) grown on amorphous Si (a-Si) by ultra-high vacuum chemical vapor deposition (UHVCVD) over oxide barriers at low temperatures (Tles450degC) exhibits a larger grain size and lower defect density than the as-grown poly-Ge next to the oxide barriers. Poly-Ge as deposited at 450degC is p-type, but the introduction of PH3 during Ge deposition gives n-type poly-Ge with n = 2.1times1018 cm-3. The possible defect reduction and range of doping make poly-Ge a strong candidate for application to CMOS-compatible back-end photonic devices.
Keywords :
CMOS integrated circuits; chemical vapour deposition; elemental semiconductors; germanium; grain size; integrated optics; semiconductor doping; semiconductor growth; semiconductor thin films; CMOS-compatible back-end photonic devices; Ge; Si; amorphous silicon; back-end photonic integration; defect density; defect reduction; doping; grain size; low-temperature germanium chemical vapor deposition; n-type polycrystalline germanium; oxide barriers; p-type polycrystalline germanium; plasma-enhanced chemical vapor deposition; temperature 450 degC; ultrahigh vacuum chemical vapor deposition; Chemical vapor deposition; Fabrication; Germanium; Grain size; Photodetectors; Photonics; Plasma temperature; Scanning electron microscopy; Strain measurement; Substrates; Polycrystalline germanium; UHVCVD; grain engineering; lateral overgrowth;
Conference_Titel :
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4402-1
Electronic_ISBN :
1949-2081
DOI :
10.1109/GROUP4.2009.5338312
