Title :
Center wavelength uniformity of shallow-etched silicon photonic wire AWG
Author :
Kim, Duk-Jun ; Pyo, Junghyung ; Kim, Gyungock
Author_Institution :
Convergence & Components & Mater. Res. Lab., Electron. & Telecommun. Res. Inst. (ETRI), Daejeon, South Korea
Abstract :
We have fabricated a WDM device consisting of two or three shallow-etched AWGs on 5-inch SOI wafer. The center wavelength difference between the closely located AWGs was smaller than 1 nm. Meanwhile, the center wavelength deviation over the whole wafer was larger than 5 nm.
Keywords :
arrayed waveguide gratings; elemental semiconductors; etching; integrated optics; optical communication equipment; optical fabrication; optical filters; silicon; wavelength division multiplexing; SOI wafer; Si; WDM filter; arrayed waveguide gratings; center wavelength uniformity; optical device fabrication; shallow-etched AWG; shallow-etched silicon photonic wire; size 5 inch; wavelength division multiplexing; Arrayed waveguide gratings; CMOS technology; Convergence; Etching; Optical waveguides; Phased arrays; Semiconductor waveguides; Silicon; Wavelength division multiplexing; Wire;
Conference_Titel :
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4402-1
Electronic_ISBN :
1949-2081
DOI :
10.1109/GROUP4.2009.5338313
