DocumentCode
2471927
Title
Design of oxide aperture profile within selectively oxidized VCSELs
Author
Choquette, Kent D. ; Allerman, A.A. ; Geib, K.M. ; Hammons, B.E. ; Mathes, D. ; Hull, R.
Author_Institution
Center for Compound Semicond. Technol., Sandia Nat. Labs., Albuquerque, NM, USA
Volume
2
fYear
1998
fDate
3-4 Dec 1998
Firstpage
179
Abstract
Summary form only given. We show that the profile of buried oxide apertures within selectively oxidized AlGaAs VCSELs is influenced by the composition of surrounding layers, which in turn affects the VCSEL performance
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; optical design techniques; oxidation; semiconductor lasers; surface emitting lasers; AlGaAs; AlGaAs VCSELs; VCSEL performance; buried oxide apertures; oxide aperture profile; selectively oxidized; selectively oxidized VCSELs; Apertures; Distributed Bragg reflectors; Electron optics; Laboratories; Materials science and technology; Mirrors; Optical losses; Oxidation; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4947-4
Type
conf
DOI
10.1109/LEOS.1998.739520
Filename
739520
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