Title :
Design of oxide aperture profile within selectively oxidized VCSELs
Author :
Choquette, Kent D. ; Allerman, A.A. ; Geib, K.M. ; Hammons, B.E. ; Mathes, D. ; Hull, R.
Author_Institution :
Center for Compound Semicond. Technol., Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
Summary form only given. We show that the profile of buried oxide apertures within selectively oxidized AlGaAs VCSELs is influenced by the composition of surrounding layers, which in turn affects the VCSEL performance
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical design techniques; oxidation; semiconductor lasers; surface emitting lasers; AlGaAs; AlGaAs VCSELs; VCSEL performance; buried oxide apertures; oxide aperture profile; selectively oxidized; selectively oxidized VCSELs; Apertures; Distributed Bragg reflectors; Electron optics; Laboratories; Materials science and technology; Mirrors; Optical losses; Oxidation; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739520
