DocumentCode :
2471948
Title :
High performance AlAs native oxide-confined GaInP/AlGaInP 635 nm laser diode
Author :
Kim, Hak-Hwan ; Oh, Dong-Ch´eol ; Hwang, Sun-Lyeong ; Bae, Yu-Dong ; Sung, Kang-Hyun ; Jung, Jong-Je
Volume :
2
fYear :
1998
fDate :
3-4 Dec 1998
Firstpage :
181
Abstract :
Highly efficient GaInP-AlGaInP red laser diodes have been widely used in applications. In this experiment, we carried out wet-oxidation of AlAs which was selectively re-grown on ridge sides with SiO2 masked top
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; oxidation; semiconductor lasers; AlAs; GaInP-AlGaInP; GaInP-AlGaInP red laser diodes; SiO2; SiO2 masked top; high performance AlAs native oxide-confined GaInP-AlGaInP 635 nm laser diode; ridge sides; selectively re-grown; wet-oxidation; Chemical lasers; Diode lasers; Laser modes; Optical refraction; Optical variables control; Optical waveguides; Oxidation; Surface emitting lasers; Vertical cavity surface emitting lasers; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
Type :
conf
DOI :
10.1109/LEOS.1998.739521
Filename :
739521
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2471948
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