High accurate optical proximity correction under the influences of lens aberration in 0.15 /spl mu/m logic process

In this paper, the high correction accuracy of simulation-based optical proximity correction under a 0.15/spl mu/m logic process is described. We applied simulation-based OPC to actual gate poly and contact photo-patterning. We consider the influences of lens aberration of the optical projection system in 0.15/spl mu/m logic photo patterning, such as 0.12/spl mu/m reduced gate photo, and 0.18/spl mu/m contact photo using KrF excimer lithography. We estimate these influences with the Seidel aberration which are analyzed by aerial image simulation. The common process latitudes for typical patterns are calculated, and the aberration effect was evaluated.