Title :
Si/Ge separated absorption charge multiplication avalanche photodetector with low dark current
Author :
Xue, Chunlai ; Xue, Haiyun ; Cheng, Buwen ; Bai, Anqi ; Hu, Weixuan ; Yu, Yude ; Wang, Qiming
Author_Institution :
State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing, China
Abstract :
We report a Ge/Si APD with a gain of 8.8 when biased at 90% of breakdown voltage operating at 1310 nm. The dark current density is less than 82 uA/cm2 at biases up to -20 V.
Keywords :
Ge-Si alloys; absorption; avalanche photodiodes; current density; electric breakdown; photodetectors; SiGe; avalanche photodetector; breakdown voltage; charge multiplication; dark current density; low dark current; separated absorption; wavelength 1310 nm; Absorption; Dark current; Dry etching; Germanium; Photodetectors; Plasma temperature; Semiconductor films; Silicon; Substrates; Tunneling; Avalanche photodetectors; Si/Ge; charge and multiplication; separate absorption;
Conference_Titel :
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4402-1
Electronic_ISBN :
1949-2081
DOI :
10.1109/GROUP4.2009.5338325
