Title :
Electrical characteristics of proton bombarded GaAs vertical-cavity-surface-emitting lasers
Author :
Van Der Ziel, Jan P. ; Ramaswamy, Ananth
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Analysis of data from VCSELs with different d2 proton implant diameters indicate the presence of both dominant surface recombination occurring at the intersection of the deep proton implant and the active layer, and smaller bulk recombination occurring in the active layer under the laser aperture
Keywords :
gallium arsenide; ion implantation; ion recombination; proton effects; semiconductor lasers; surface emitting lasers; GaAs; active layer; bulk recombination; deep proton implant; dominant surface recombination; electrical characteristics; laser aperture; proton bombarded GaAs vertical-cavity-surface-emitting lasers; proton implant diameters; Apertures; Electric variables; Gallium arsenide; Implants; Laser modes; Protons; Solid modeling; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739538
