A novel RET for random pattern formation utilizing attenuating non-phase-shift assist pattern

Author

Nakao, S. ; Tokui, A. ; Tsujita, K. ; Arimoto, I. ; Wakamiya, W.

Author_Institution

ULSI Dev. Center, Mitsubishi Electr. Corp., Hyogo, Japan

fYear

2000

fDate

11-13 July 2000

Firstpage

44

Lastpage

45

Abstract

A novel resolution enhancement technology (RET) for random pattern formation which utilizes attenuating non-phase-shift (Atten-NPS) assist pattern is proposed based on optical image calculation. By addition of Atten-NPS assist pattern on mask for isolated Feature, much improvement of imaging characteristics is-obtained under modified illumination. In the application of this RET, Cr aperture size of assist pattern on mask can make similar to that of main pattern. Consequently, difficulty in mask fabrication for conventional assist pattern method will be overcome.

Keywords

photolithography; photoresists; aperture size; assist pattern; attenuating non-phase-shift assist pattern; optical image calculation; random pattern formation; resolution enhancement technology; Apertures; Chromium; Electronic mail; Focusing; Lighting; Optical attenuators; Optical films; Optical imaging; Pattern formation; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2000 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-004-6

Type

conf

DOI

10.1109/IMNC.2000.872614

Filename

872614