Title :
A novel RET for random pattern formation utilizing attenuating non-phase-shift assist pattern
Author :
Nakao, S. ; Tokui, A. ; Tsujita, K. ; Arimoto, I. ; Wakamiya, W.
Author_Institution :
ULSI Dev. Center, Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A novel resolution enhancement technology (RET) for random pattern formation which utilizes attenuating non-phase-shift (Atten-NPS) assist pattern is proposed based on optical image calculation. By addition of Atten-NPS assist pattern on mask for isolated Feature, much improvement of imaging characteristics is-obtained under modified illumination. In the application of this RET, Cr aperture size of assist pattern on mask can make similar to that of main pattern. Consequently, difficulty in mask fabrication for conventional assist pattern method will be overcome.
Keywords :
photolithography; photoresists; aperture size; assist pattern; attenuating non-phase-shift assist pattern; optical image calculation; random pattern formation; resolution enhancement technology; Apertures; Chromium; Electronic mail; Focusing; Lighting; Optical attenuators; Optical films; Optical imaging; Pattern formation; Ultra large scale integration;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
DOI :
10.1109/IMNC.2000.872614
