Titanium oxide vertical resistive random-access memory device

Author

Fryauf, David M. ; Norris, Kate J. ; Junce Zhang ; Shih-Yuan Wang ; Kobayashi, Nobuhiko P.

Author_Institution

Electr. Eng. Dept., Univ. of California, Santa Cruz, Santa Cruz, CA, USA

Volume

10

Issue

7

fYear

2015

fDate

7 2015

Firstpage

321

Lastpage

323

Abstract

Pt/TiO₂/Pt vertical resistive random-access memory switching devices were fabricated in a vertical three-dimensional structure by combining conventional photolithography, electron-beam evaporation for electrodes and atomic layer deposition for dielectric layers. The active switching cross-sectional area was ~0.02 μm², which is comparable to nanosized devices that require more elaborative fabrication processes. Structural integrity and electrical characteristics of the vertical memory device were analysed by cross-sectional scanning, transmission electron microscopy and current-voltage characteristics.

Keywords

atomic layer deposition; electrical resistivity; electron beam deposition; metal-semiconductor-metal structures; photolithography; platinum; resistive RAM; scanning electron microscopy; semiconductor materials; titanium compounds; transmission electron microscopy; vacuum deposition; Pt-TiO₂-Pt; active switching cross-sectional area; atomic layer deposition; cross-sectional scanning electron microscopy; current-voltage characteristics; dielectric layers; electrical characteristics; electrodes; electron-beam evaporation; nanosized devices; photolithography; structural integrity; transmission electron microscopy; vertical resistive random-access memory switching devices; vertical three-dimensional structure;

fLanguage

English

Journal_Title

Micro & Nano Letters, IET

Publisher

iet

ISSN

1750-0443

Type

jour

DOI

10.1049/mnl.2015.0021

Filename

7166436