Title :
7E-4 Enhanced Power Handling and Quality Factor in Thin-Film Piezoelectric-on-Substrate Resonators
Author :
Abdolvand, Reza ; Ayazi, Farrokh
Author_Institution :
Georgia Inst. of Technol., Atlanta
Abstract :
In this paper, we report on the superior quality factor and power handling of thin-film piezoelectric-on-substrate (TPoS) resonators. A maximum Q of 17000 in vacuum is measured for an AIN-on-Silicon resonator at ~35MHz, and a maximum f.Q product of ~2.9x1012 is measured in air for a device resonating at 500MHz. AIN-on-Silicon resonators are fabricated on a 10 mum thick SOI substrate where the A1N film is 1 mum thick. The quality factor and the power handling are measured and compared before and after removing the structural silicon layer from the backside of a resonator. The measured results verify the advantages of including a silicon substrate in the resonant structure for oscillator applications.
Keywords :
Q-factor; acoustic resonators; aluminium compounds; crystal resonators; silicon; thin films; AlN-S; oscillator application; power handling oscillator; quality factor; resonant structure; silicon substrate; thin film piezoelectric-on-substrate resonators; Electrodes; Impedance; Linearity; Oscillators; Piezoelectric films; Q factor; Q measurement; Resonance; Silicon; Substrates;
Conference_Titel :
Ultrasonics Symposium, 2007. IEEE
Conference_Location :
New York, NY
Print_ISBN :
978-1-4244-1384-3
Electronic_ISBN :
1051-0117
DOI :
10.1109/ULTSYM.2007.158
