7E-4 Enhanced Power Handling and Quality Factor in Thin-Film Piezoelectric-on-Substrate Resonators

Author

Abdolvand, Reza ; Ayazi, Farrokh

Author_Institution

Georgia Inst. of Technol., Atlanta

fYear

2007

fDate

28-31 Oct. 2007

Firstpage

608

Lastpage

611

Abstract

In this paper, we report on the superior quality factor and power handling of thin-film piezoelectric-on-substrate (TPoS) resonators. A maximum Q of 17000 in vacuum is measured for an AIN-on-Silicon resonator at ~35MHz, and a maximum f.Q product of ~2.9x10¹² is measured in air for a device resonating at 500MHz. AIN-on-Silicon resonators are fabricated on a 10 mum thick SOI substrate where the A1N film is 1 mum thick. The quality factor and the power handling are measured and compared before and after removing the structural silicon layer from the backside of a resonator. The measured results verify the advantages of including a silicon substrate in the resonant structure for oscillator applications.

Keywords

Q-factor; acoustic resonators; aluminium compounds; crystal resonators; silicon; thin films; AlN-S; oscillator application; power handling oscillator; quality factor; resonant structure; silicon substrate; thin film piezoelectric-on-substrate resonators; Electrodes; Impedance; Linearity; Oscillators; Piezoelectric films; Q factor; Q measurement; Resonance; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2007. IEEE

Conference_Location

New York, NY

ISSN

1051-0117

Print_ISBN

978-1-4244-1384-3

Electronic_ISBN

1051-0117

Type

conf

DOI

10.1109/ULTSYM.2007.158

Filename

4409731