• DocumentCode
    2472436
  • Title

    Sub-50-nm patterning in EUV lithography

  • Author

    Oizumi, H. ; Nishiyama, I. ; Yamanashi, H. ; Ei Yano ; Okazaki, S.

  • Author_Institution
    EUV Lithography Lab., Assoc. of Super-Adv. Electron. Technol., Atsugi, Japan
  • fYear
    2000
  • fDate
    11-13 July 2000
  • Firstpage
    48
  • Lastpage
    49
  • Abstract
    In this work, we have introduced and investigated a micro-field exposure system for EUV lithography (EUVL) at an exposure wavelength of 13.5 nm using 20:1 Schwarzschild optics. The resolution limit of this exposure system was evaluated by experimental pattern replications.
  • Keywords
    ultraviolet lithography; 13.5 nm; 50 nm; EUV lithography; Schwarzschild optics; micro-field exposure system; pattern replication; resolution limit; Acceleration; Laboratories; Lighting; Lithography; Mirrors; Nonhomogeneous media; Optical films; Optical filters; Resists; Ultraviolet sources;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2000 International
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-004-6
  • Type

    conf

  • DOI
    10.1109/IMNC.2000.872616
  • Filename
    872616
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2472436