• DocumentCode
    2472446
  • Title

    ECR etching of /spl alpha/-Ta for x-ray mask absorber using chlorine and fluoride gas mixture

  • Author

    Tsuchizawa, T. ; Iriguchi, H. ; Takahashi, C. ; Shimada, M. ; Uchiyama, S. ; Oda, M.

  • Author_Institution
    NTT Telecommun. Energy Labs., Kanagawa, Japan
  • fYear
    2000
  • fDate
    11-13 July 2000
  • Firstpage
    50
  • Lastpage
    51
  • Abstract
    We investigated the effect of using fluoride gas in ECR etching of /spl alpha/-Ta and confirmed that the addition of CF4 to Cl2 reduces the pattern roughness and can fabricate x-ray masks with pattern sizes of less than 100 nm. The results of CD uniformity will also be reported.
  • Keywords
    X-ray masks; sputter etching; tantalum; /spl alpha/-Ta; CD uniformity; ECR etching; Ta; X-ray mask absorber; chlorine/fluoride gas mixture; pattern roughness; Biomembranes; Etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2000 International
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-004-6
  • Type

    conf

  • DOI
    10.1109/IMNC.2000.872617
  • Filename
    872617
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2472446