DocumentCode :
2472520
Title :
Mask error factor in proximity X-ray lithography
Author :
Fujii, Kiyoshi ; Suzuki, Katsumi ; Matsui, Yasuji
Author_Institution :
Super-fine SR Lithography Lab., Assoc. of Super-Adv. Electron. Technol., Kanagawa, Japan
fYear :
2000
fDate :
11-13 July 2000
Firstpage :
58
Lastpage :
59
Abstract :
Many estimations have shown that an increase in mask-error factor (MEF) will be a serious issue for deep ultraviolet lithography in the 130- and 100-nm device generations. For proximity X-ray lithography (PXL), reduction of the MEF has already been reported. The MEF reduction is advantageous for PXL because it allows larger error in the critical dimension (CD) on 1X X-ray masks. To define the characteristics of the MEF in PXL, we used the CNTech Toolset lithography simulator to calculate the MEFs for line-and-space (L/S), isolated-line, and isolated-hole patterns with feature sizes as low as 70 nm. We also made exposure experiments with an XS-1 X-ray stepper at the Association of Super Advanced Electronics Technologies (ASET) to verify the simulation results.
Keywords :
X-ray masks; proximity effect (lithography); mask error factor; proximity X-ray lithography; Chemical technology; Degradation; Geometrical optics; Isolation technology; Laboratories; Printing; Resists; Strontium; X-ray imaging; X-ray lithography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
Type :
conf
DOI :
10.1109/IMNC.2000.872621
Filename :
872621
Link To Document :
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