DocumentCode
2472547
Title
Photoluminescence of dry-oxidized Er3+-doped Alx Ga1-xAs
Author
Kou, L. ; Hall, D.C. ; Muth, J.F. ; Zhang, T. ; Kolbas, R.M.
Author_Institution
Dept. of Electr. Eng., Notre Dame Univ., IN, USA
Volume
2
fYear
1998
fDate
3-4 Dec 1998
Firstpage
244
Abstract
We present experimental results on dry oxides of AlGaAs semiconductor which provide further evidence that OH-groups, unavoidably present in wet thermally oxidized AlGaAs films, act as luminescence-quenching nonradiative decay centers. Further process optimization to produce OH-free films without crystal dissociation is required
Keywords
III-V semiconductors; aluminium compounds; erbium; gallium arsenide; optical films; photoluminescence; radiation quenching; AlGaAs semiconductor; AlGaAs:Er; Er3+-doped AlxGa1-xAs; OH; OH-free films; OH-groups; crystal dissociation; dry-oxidized; luminescence-quenching nonradiative decay centers; photoluminescence; process optimization; wet thermally oxidized AlGaAs films; Argon; Detectors; Electron tubes; Erbium; Fluorescence; Laser excitation; Optical microscopy; Oxidation; Photoluminescence; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4947-4
Type
conf
DOI
10.1109/LEOS.1998.739550
Filename
739550
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