DocumentCode :
2472590
Title :
Evaluation of the effective image blurring factors in the synchrotron proximity X-ray lithography simulation
Author :
Yongduck Seo ; Ohyun Kim
Author_Institution :
Adv. Lithography Center, Postech, Kyungbuk, South Korea
fYear :
2000
fDate :
11-13 July 2000
Firstpage :
64
Lastpage :
65
Abstract :
An evaluation of the effective image blurring factors in the horizontal and vertical directions for the synchrotron proximity X-ray lithography simulation was studied, compared with the experimental data for various conditions of the gap between the mask and the wafer.
Keywords :
X-ray lithography; proximity effect (lithography); semiconductor process modelling; effective image blurring factor; synchrotron proximity X-ray lithography simulation; Biomembranes; Convolution; Electrons; Gaussian distribution; Light scattering; Light sources; Resists; Synchrotrons; X-ray lithography; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
Type :
conf
DOI :
10.1109/IMNC.2000.872624
Filename :
872624
Link To Document :
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