DocumentCode :
2472705
Title :
Fabrication of a bump-type Si probe card
Author :
Dong-Seok Lee ; Jeong-Yong Park ; Dong-Kwon Kim ; Jong-Hyun Lee
Author_Institution :
Sch. of Electron. & Electr. Eng., Kyungpook Nat. Univ., Taegu, South Korea
fYear :
2000
fDate :
11-13 July 2000
Firstpage :
76
Lastpage :
77
Abstract :
A probe card is used to test IC chips before they are packaged. As functions of IC become more and more complex, the number of metal pads and operating frequency also increase. So the performance of a probe card should be improved. Recently, many studies have been reported concerning this issue. The performance of a probe card should meet the requirements stated below. First, the number of probe tips should not be limited by its geometrical structure or fabrication method. Second, each probe should have independent tension when contacting metal pad. Third, multiple ICs or full wafer should be tested simultaneously with one probe card to reduce cost and time consumed. Fourth, wafer level burn in test should be carried out with a probe card. In this work, we propose a new probe card fabrication method and geometrical structure that have a potential to meet all the requirements mentioned above.
Keywords :
integrated circuit testing; probes; smart cards; IC chip; Si; bump-type silicon probe card; fabrication; wafer-level burn-in testing; Contact resistance; Electronic equipment testing; Electronics packaging; Etching; Fabrication; Frequency; Integrated circuit packaging; Integrated circuit testing; Network address translation; Probes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
Type :
conf
DOI :
10.1109/IMNC.2000.872630
Filename :
872630
Link To Document :
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