Title :
Young´s modulus evaluation of Si thin film fabricated by compatible process with Si MEMSs
Author :
Hirai, Y. ; Marushima, Y. ; Nishikawa, K. ; Tanaka, Y.
Author_Institution :
Osaka Prefecture Univ., Japan
Abstract :
In this paper, in-situ evaluation of a Young´s modulus for a polycrystalline Si (poly-Si) thin film on a PSG (Phosphorous doped silica glass) sacrifice layer is demonstrated based on the pull-in voltage of a cantilever, which is easily prepared during the MEMS´s fabrication process.
Keywords :
Young´s modulus; elemental semiconductors; micromechanical devices; semiconductor thin films; silicon; MEMS fabrication process; PSG sacrificial layer; Si; Young modulus; cantilever; polycrystalline Si thin film; pull-in voltage; Atomic force microscopy; Crystallization; Fabrication; Insulation; Mechanical factors; Micromechanical devices; Scanning electron microscopy; Semiconductor thin films; Substrates; Voltage;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
DOI :
10.1109/IMNC.2000.872633
