DocumentCode
2472862
Title
Low loss IGBT with Partially Narrow Mesa Structure (PNM-IGBT)
Author
Sumitomo, Masakiyo ; Asai, Junichi ; Sakane, Hiroki ; Arakawa, Kazuki ; Higuchi, Yasushi ; Matsui, Masaki
Author_Institution
Res. Labs., DENSO Corp., Nisshin, Japan
fYear
2012
fDate
3-7 June 2012
Firstpage
17
Lastpage
20
Abstract
A PNM (Partially Narrow Mesa) -IGBT with a fundamentally new surface is proposed for the first time. The unique gate shape looks like a “vase” and generates an extreme injection enhancement. Its performance approaches the limits of Si-IGBT. Therefore, PNM-IGBT is able to contribute to the saturation voltage reduction and the improvement of Vce(sat)-Eoff trade off. Furthermore, it can be adapted to actual conditions because of its sufficiently rugged structure.
Keywords
insulated gate bipolar transistors; semiconductor device manufacture; IGBT; injection enhancement; insulated gate bipolar transistors; partially narrow mesa structure; saturation voltage reduction; Fabrication; Insulated gate bipolar transistors; Logic gates; Oxidation; Prototypes; Silicon; Simulation; IEGT; IGBT; injection enhancement;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location
Bruges
ISSN
1943-653X
Print_ISBN
978-1-4577-1594-5
Electronic_ISBN
1943-653X
Type
conf
DOI
10.1109/ISPSD.2012.6229012
Filename
6229012
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