Title :
Low leakage normally-off tri-gate GaN MISFET
Author :
Lu, Bin ; Matioli, Elison ; Palacios, Tomas
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
A new tri-gate normally-off GaN metal-insulator-semiconductor field effect transistor (MISFET) is presented in this paper. By using a three-dimensional gate structure with combination of a sub-micron gate recess, the new device achieves a very low off-state drain leakage current of 0.6 μA/mm at a breakdown voltage of 565 V while maintains a low on-resistance of 2.1 mΩ·cm2. The new device has an on/off current ratio of more than 8 orders of magnitude and a sub-threshold slope of 86±9 mV/decade. The threshold voltage of the new device is 0.80±0.06 V with a maximum drain current of 530 mA/mm. These results confirm the great potential of the tri-gate normally-off GaN-on-Si MISFETs for the next generation of power electronics.
Keywords :
III-V semiconductors; MISFET; gallium compounds; leakage currents; semiconductor device models; wide band gap semiconductors; GaN; GaN-on-Si MISFET; metal-insulator-semiconductor field effect transistor; normally-off tri-gate GaN MISFET; off-state drain leakage current; on-off current ratio; power electronics; submicron gate recess; three-dimensional gate structure; voltage 565 V; Aluminum gallium nitride; Gallium nitride; Leakage current; Logic gates; MISFETs; Threshold voltage; GaN; MISFET; noramlly-off; power electronics; tri-gate;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2012.6229016
