Title :
High-power near-diffraction-limited tapered amplifiers at 1064 nm for optical intersatellite communications
Author :
Morgott, S. ; Chazan, P. ; Mayor, J.M. ; Mikulla, M. ; Kiefer, R. ; Müller, S. ; Walther, M. ; Braunstein, J. ; Weimann, G.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
Tapered power laser amplifiers have a wide range of applications such as in free space communication. In an optical intersatellite communication system based on the coherent transmission scheme, a narrow linewidth 1064 nm Nd:YAG laser in combination with a phase modulator acts as the coherent optical source. A tapered power InGaAs-AlGaAs MQW laser amplifier chip for the wavelength of 1064 nm was developed to boost the optical output power to the watt level. We show the amplifier device fabrication and characterisation and the first steps to space qualification
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical links; optical transmitters; quantum well lasers; satellite links; 1064 nm; InGaAs-AlGaAs; InGaAs-AlGaAs MQW laser amplifier chi; YAG:Nd; YAl5O12:Nd; amplifier device fabrication; coherent transmission scheme; high-power near-diffraction-limited tapered amplifiers; narrow linewidth; optical intersatellite communication system; optical intersatellite communications; optical output power; phase modulator; space qualification; tapered power laser amplifiers; High power amplifiers; Optical amplifiers; Optical modulation; Phase modulation; Power amplifiers; Power generation; Power lasers; Quantum well devices; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739605
