DocumentCode
2472945
Title
A high speed Mach-Zehnder silicon evanescent modulator using capacitively loaded traveling wave electrode
Author
Chen, Hui-Wen ; Kuo, Ying-hao ; Bowers, John E.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of California Santa Barbara, Santa Barbara, CA, USA
fYear
2009
fDate
9-11 Sept. 2009
Firstpage
247
Lastpage
249
Abstract
We demonstrate a traveling-wave Mach-Zehnder silicon evanescent modulator that implements a slotline design for the electrodes. The device has a modulation efficiency of 1.6 V-mm and modulation bandwidth of 20 GHz.
Keywords
Mach-Zehnder interferometers; electrodes; elemental semiconductors; high-speed optical techniques; integrated optics; optical design techniques; optical modulation; optical waveguides; silicon; slot lines; Mach-Zehnder interferometer; Si; bandwidth 20 GHz; capacitively loaded traveling wave electrode; high speed Mach-Zehnder modulator; modulation bandwidth; modulation efficiency; silicon evanescent modulator; silicon waveguide; slotline design; Electrodes; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location
San Francisco, CA
ISSN
1949-2081
Print_ISBN
978-1-4244-4402-1
Electronic_ISBN
1949-2081
Type
conf
DOI
10.1109/GROUP4.2009.5338370
Filename
5338370
Link To Document