Title :
1.6kV, 2.9 mΩ cm2 normally-off p-GaN HEMT device
Author :
Hwang, Injun ; Choi, Hyoji ; Lee, JaeWon ; Choi, Hyuk Soon ; Kim, Jongseob ; Ha, Jongbong ; Um, Chang-Yong ; Hwang, Sun-Kyu ; Oh, Jaejoon ; Kim, Jun-Youn ; Shin, Jai Kwang ; Park, Youngsoo ; Chung, U-In ; Yoo, In-Kyeong ; Kim, Kinam
Author_Institution :
Samsung Adv. Inst. of Technol., Samsung Electron. Co., Ltd., Yongin, South Korea
Abstract :
A p-GaN/AlGaN/GaN based normally-off HEMT device has been demonstrated on a Si substrate. Our p-GaN based device shows not only a high threshold voltage of 3 V but also low gate leakage current. Buffer and device breakdown voltages exceed 1600 V with 5.2 um GaN buffer thickness and specific on-state resistance is 2.9mΩ cm2. The calculated figure of merit is 921 MV2/Ωcm2, which is the highest value reported for the GaN E-mode devices.
Keywords :
II-VI semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; E-mode devices; GaN-AlGaN-GaN; Si; normally-off HEMT device; on-state resistance; voltage 1.6 kV; voltage 3 V; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; Silicon; Substrates;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2012.6229018
