High voltage normally-off GaN MOSC-HEMTs on silicon substrates for power switching applications

Author

Zhongda Li ; Waldron, J. ; Dayal, Rohan ; Parsa, Leila ; Hella, Mona ; Chow, T.P.

Author_Institution

Dept. of Electr., Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

2012

fDate

3-7 June 2012

Firstpage

45

Lastpage

48

Abstract

We report our experimental results on high voltage normally-off GaN MOS channel HEMTs (MOSC-HEMT) on silicon substrates with best specific on-resistance (R_on,sp) of 4 mΩ-cm² and breakdown voltage (BV) of 840V. The switching performance of the device was evaluated by SPICE simulations of a buck-boost converter and showed a system efficiency of 10% higher than that using a commercial GaN HEMT. A bidirectional switch consisted two GaN MOSC-HEMTs were also demonstrated.

Keywords

III-V semiconductors; electric breakdown; elemental semiconductors; gallium compounds; power HEMT; power MOSFET; power convertors; power semiconductor switches; silicon; wide band gap semiconductors; GaN; MOS channel; SPICE simulations; Si; best specific on-resistance; bidirectional switch; breakdown voltage; buck-boost converter; efficiency 10 percent; high voltage normally-off MOSC-HEMT; power switching; voltage 840 V; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; Silicon; Substrates; Switching circuits; Enhancement-mode; Gallium Nitride; High breakdown voltage; MOSC-HEMTs; Power switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on

Conference_Location

Bruges

ISSN

1943-653X

Print_ISBN

978-1-4577-1594-5

Electronic_ISBN

1943-653X

Type

conf

DOI

10.1109/ISPSD.2012.6229019

Filename

6229019