Title :
High voltage normally-off GaN MOSC-HEMTs on silicon substrates for power switching applications
Author :
Zhongda Li ; Waldron, J. ; Dayal, Rohan ; Parsa, Leila ; Hella, Mona ; Chow, T.P.
Author_Institution :
Dept. of Electr., Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
We report our experimental results on high voltage normally-off GaN MOS channel HEMTs (MOSC-HEMT) on silicon substrates with best specific on-resistance (Ron,sp) of 4 mΩ-cm2 and breakdown voltage (BV) of 840V. The switching performance of the device was evaluated by SPICE simulations of a buck-boost converter and showed a system efficiency of 10% higher than that using a commercial GaN HEMT. A bidirectional switch consisted two GaN MOSC-HEMTs were also demonstrated.
Keywords :
III-V semiconductors; electric breakdown; elemental semiconductors; gallium compounds; power HEMT; power MOSFET; power convertors; power semiconductor switches; silicon; wide band gap semiconductors; GaN; MOS channel; SPICE simulations; Si; best specific on-resistance; bidirectional switch; breakdown voltage; buck-boost converter; efficiency 10 percent; high voltage normally-off MOSC-HEMT; power switching; voltage 840 V; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; Silicon; Substrates; Switching circuits; Enhancement-mode; Gallium Nitride; High breakdown voltage; MOSC-HEMTs; Power switching;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2012.6229019
