Title :
Feasibility of new ARC using PECVD for both KrF and ArF lithography
Author :
Kim, Yongbeom ; Lee, Junghyeon ; Cho, Hanku ; Moon, Jootae
Author_Institution :
Semicond. R&D, Samsung Electron. Co. Ltd., Kyungki-Do, South Korea
Abstract :
We developed and confirmed the feasibility of a new carbon ARC (CARC) for both KrF and ArF lithography. CARC has high conformability on topography and is easily removable during the resist stripping process. Also good ARC performance and etch characteristics of CARC with sublayers are obtained. Thus, CARC is a promising alternative to SiON ARC and organic ARC.
Keywords :
antireflection coatings; carbon; plasma CVD; plasma CVD coatings; reflectivity; ultraviolet lithography; ARC; C; CD uniformity; PECVD; coating performance; etch characteristics; excimer laser lithography; high conformability; reflectance simulation; resist stripping; Carbon; Chemical elements; Etching; Extinction coefficients; Hydrogen; Lithography; Optical refraction; Organic materials; Reflectivity; Substrates;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
DOI :
10.1109/IMNC.2000.872645
