DocumentCode
2473009
Title
Feasibility of new ARC using PECVD for both KrF and ArF lithography
Author
Kim, Yongbeom ; Lee, Junghyeon ; Cho, Hanku ; Moon, Jootae
Author_Institution
Semicond. R&D, Samsung Electron. Co. Ltd., Kyungki-Do, South Korea
fYear
2000
fDate
11-13 July 2000
Firstpage
106
Lastpage
107
Abstract
We developed and confirmed the feasibility of a new carbon ARC (CARC) for both KrF and ArF lithography. CARC has high conformability on topography and is easily removable during the resist stripping process. Also good ARC performance and etch characteristics of CARC with sublayers are obtained. Thus, CARC is a promising alternative to SiON ARC and organic ARC.
Keywords
antireflection coatings; carbon; plasma CVD; plasma CVD coatings; reflectivity; ultraviolet lithography; ARC; C; CD uniformity; PECVD; coating performance; etch characteristics; excimer laser lithography; high conformability; reflectance simulation; resist stripping; Carbon; Chemical elements; Etching; Extinction coefficients; Hydrogen; Lithography; Optical refraction; Organic materials; Reflectivity; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-004-6
Type
conf
DOI
10.1109/IMNC.2000.872645
Filename
872645
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