DocumentCode
2473029
Title
Spectral selective mid-infrared detector on a silicon platform
Author
Wang, Jianfei ; Hu, Juejun ; Sun, Xiaochen ; Becla, Piotr ; Agarwal, Anuradha M. ; Kimerling, Lionel C.
Author_Institution
Microphotonics Center, Massachusetts Inst. of Technol., Cambridge, MA, USA
fYear
2009
fDate
9-11 Sept. 2009
Firstpage
235
Lastpage
237
Abstract
We report the design, fabrication, and characterization of spectral selective mid-infrared PbTe photodetector pixels monolithically integrated on a silicon platform. We demonstrate spectral selectivity with a peak responsivity of 65.4 V/W.
Keywords
IV-VI semiconductors; infrared detectors; lead compounds; photoconducting devices; photodetectors; photonic crystals; semiconductor thin films; silicon; FTIR spectra; PbTe-Si; cavity mode; film; mid-IR photoconductive pixels; mid-infrared photodetector; monolithic integration; one-dimensional photonic crystal; peak responsivity; photoconductivity; silicon platform; spectral selectivity; Fabrication; Infrared detectors; Monolithic integrated circuits; Optical design; Optical films; Photodetectors; Silicon; Substrates; Temperature sensors; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location
San Francisco, CA
ISSN
1949-2081
Print_ISBN
978-1-4244-4402-1
Electronic_ISBN
1949-2081
Type
conf
DOI
10.1109/GROUP4.2009.5338376
Filename
5338376
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