• DocumentCode
    2473060
  • Title

    Bipolar injection in nanocrystalline-Si LEDs with low turn-on voltages and high power efficiency

  • Author

    Anopchenko, A. ; Marconi, A. ; Moser, E. ; Wang, M. ; Pucker, G. ; Bellutti, P. ; Pavesi, L.

  • Author_Institution
    Dept. of Phys., Univ. of Trento, Povo, Italy
  • fYear
    2009
  • fDate
    9-11 Sept. 2009
  • Firstpage
    229
  • Lastpage
    231
  • Abstract
    Bipolar (electrons and holes) charge injection, the onset voltages of electroluminescence as low as 1.4 V, and power efficiency of around 0.2% are demonstrated in thin nanocrystalline-Si/SiO2 multilayer LEDs grown by plasma-enhanced CVD.
  • Keywords
    charge injection; electroluminescence; elemental semiconductors; light emitting diodes; multilayers; plasma CVD; semiconductor growth; silicon; silicon compounds; Si-SiO2; bipolar charge injection; current density; electroluminescence; light emitting diode; multilayer LED; nanocrystalline silicon; optical power density; plasma-enhanced CVD; power efficiency; turn-on voltage; voltage 1.4 V; Charge carrier processes; Current density; Electron emission; Laboratories; Light emitting diodes; Low voltage; Nanocrystals; Nonhomogeneous media; Silicon; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
  • Conference_Location
    San Francisco, CA
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4244-4402-1
  • Electronic_ISBN
    1949-2081
  • Type

    conf

  • DOI
    10.1109/GROUP4.2009.5338378
  • Filename
    5338378
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2473060