DocumentCode :
2473060
Title :
Bipolar injection in nanocrystalline-Si LEDs with low turn-on voltages and high power efficiency
Author :
Anopchenko, A. ; Marconi, A. ; Moser, E. ; Wang, M. ; Pucker, G. ; Bellutti, P. ; Pavesi, L.
Author_Institution :
Dept. of Phys., Univ. of Trento, Povo, Italy
fYear :
2009
fDate :
9-11 Sept. 2009
Firstpage :
229
Lastpage :
231
Abstract :
Bipolar (electrons and holes) charge injection, the onset voltages of electroluminescence as low as 1.4 V, and power efficiency of around 0.2% are demonstrated in thin nanocrystalline-Si/SiO2 multilayer LEDs grown by plasma-enhanced CVD.
Keywords :
charge injection; electroluminescence; elemental semiconductors; light emitting diodes; multilayers; plasma CVD; semiconductor growth; silicon; silicon compounds; Si-SiO2; bipolar charge injection; current density; electroluminescence; light emitting diode; multilayer LED; nanocrystalline silicon; optical power density; plasma-enhanced CVD; power efficiency; turn-on voltage; voltage 1.4 V; Charge carrier processes; Current density; Electron emission; Laboratories; Light emitting diodes; Low voltage; Nanocrystals; Nonhomogeneous media; Silicon; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location :
San Francisco, CA
ISSN :
1949-2081
Print_ISBN :
978-1-4244-4402-1
Electronic_ISBN :
1949-2081
Type :
conf
DOI :
10.1109/GROUP4.2009.5338378
Filename :
5338378
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2473060
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