Sub-100 nm device fabrication using proximity X-ray lithography at five levels

Author

Iba, Y. ; Taguchi, T. ; Kumasaka, F. ; Iizuka, T. ; Sanbonsugi, Y. ; Deguchi, K. ; Aoyama, H. ; Fukuda, M. ; Oda, M. ; Morita, H. ; Matsuda, T. ; Horiuchi, K. ; Matsui, Y.

Author_Institution

Fujitsu Labs. Ltd., Kanagawa, Japan

fYear

2000

fDate

11-13 July 2000

Firstpage

114

Lastpage

115

Abstract

Proximity X-ray lithography (PXL) is a promising technology for fabricating ultra-large-scale integrated (ULSI) devices smaller than 100 nm because it offers high-resolution capabilities and dimensional control with high throughput. We used PXL at five levels (mark, isolation, gate, contact, wiring) and fabricated 100-nm complicated dense patterns and sub-100-nm channel length MOSFETs. In this paper, we discuss lithographic performance and the performance of the MOSFET device.

Keywords

CMOS integrated circuits; ULSI; X-ray lithography; nanotechnology; proximity effect (lithography); CD variation; MOSFET; ULSI device fabrication; complicated dense patterns; dimensional control; five levels; high throughput; high-resolution; lithographic performance; process flow; proximity X-ray lithography; Fabrication; Fluctuations; Ion implantation; Isolation technology; Laboratories; MOSFET circuits; Resists; Strontium; Ultra large scale integration; X-ray lithography;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2000 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-004-6

Type

conf

DOI

10.1109/IMNC.2000.872649

Filename

872649