• DocumentCode
    2473091
  • Title

    Stress-induced χ(2) in silicon — Comparison between theoretical and experimental values

  • Author

    Hon, Nick K. ; Tsia, Kevin K. ; Solli, Daniel R. ; Jalali, Bahram ; Khurgin, Jacob B.

  • Author_Institution
    Electr. Eng. Dept., Univ. of California, Los Angeles, CA, USA
  • fYear
    2009
  • fDate
    9-11 Sept. 2009
  • Firstpage
    232
  • Lastpage
    234
  • Abstract
    We provide a new theoretical estimation of stress-induced chi(2) in silicon and highlight the fact that there exists a large difference between theoretical and experimentally measured values. Possible reasons for this discrepancy are discussed.
  • Keywords
    elemental semiconductors; integrated optics; nonlinear optical susceptibility; piezo-optical effects; silicon; Si; measurement discrepancy; silicon photonic devices; strained induced second order nonlinearity; strained silicon; stress-induced chi(2); Estimation theory; Silicon; Stress measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
  • Conference_Location
    San Francisco, CA
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4244-4402-1
  • Electronic_ISBN
    1949-2081
  • Type

    conf

  • DOI
    10.1109/GROUP4.2009.5338380
  • Filename
    5338380
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2473091