DocumentCode
2473114
Title
Reverse-recovery safe operating area of diodes in power integrated circuits
Author
Hower, Phil ; Kaya, Cetin ; Pendharkar, Sameer ; Jones, Clif
Author_Institution
Texas Instrum., Manchester, NH, USA
fYear
2012
fDate
3-7 June 2012
Firstpage
65
Lastpage
68
Abstract
Failure during reverse recovery of an IC power diode is examined. It is shown how one-dimensional diode behavior together with mixed-mode tcad can be used to predict safe operating conditions for the actual two-dimensional case.
Keywords
failure analysis; power integrated circuits; power semiconductor diodes; IC power diode; failure analysis; mixed-mode TCAD; one-dimensional diode behavior; power integrated circuits; reverse-recovery safe operating area; two-dimensional diode behavior; Anodes; Cathodes; Charge carrier processes; Fingers; Logic gates; Semiconductor diodes; Semiconductor optical amplifiers; Egawa-profile; SOA; analog power; boost-diode; diode; mixed-mode; power; reverse-recovery; tcad;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location
Bruges
ISSN
1943-653X
Print_ISBN
978-1-4577-1594-5
Electronic_ISBN
1943-653X
Type
conf
DOI
10.1109/ISPSD.2012.6229024
Filename
6229024
Link To Document