Fabrication of gated field emitter from wedge array prepared by stamp technology

Ion-beam modified polyimide is very attractive material for use in field emitters because it can emit electrons at relatively low electric fields with a stable emission rate. The use of organic material as the starting material makes it possible to prepare emitter arrays using the stamp technology. The stamp technology is able to prepare uniform emitter arrays with high geometrical accuracy. In the previous study, a long wedge-type emitter array has been fabricated using the stamp technology. In order to increase emission current density and decrease operating voltage, it highly required to shorten the length of the wedge and to fabricate gated device structure. In this work, we demonstrate successful preparation of short-wedge emitter arrays using a modified stamp process. Fabrication of the gated field emitter arrays from the short-wedge emitters is also demonstrated.