Title :
Numerical Analysis of Si and GaAs Solar Cells Exposed to Space Radiation
Author :
Cappelletti, M.A. ; Casas, G.A. ; Cedola, A.P. ; Peltzer y Blanca, E.L.
Author_Institution :
Univ. Nac. de La Plata, La Plata, Argentina
Abstract :
In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 109 and 1013 p+/cm2. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; proton effects; silicon; solar cells; space power generation; GaAs; Si; electron volt energy 10 MeV; maximum power point; open circuit voltage; proton irradiation; short circuit current; solar cells; space application; space radiation; Gallium arsenide; Numerical analysis; Photovoltaic cells; Radiative recombination; Semiconductor device modeling; Silicon; device modeling; numerical simulation; proton radiation effects; solar cells;
Journal_Title :
Latin America Transactions, IEEE (Revista IEEE America Latina)
DOI :
10.1109/TLA.2013.6502815
