• DocumentCode
    24732
  • Title

    Numerical Analysis of Si and GaAs Solar Cells Exposed to Space Radiation

  • Author

    Cappelletti, M.A. ; Casas, G.A. ; Cedola, A.P. ; Peltzer y Blanca, E.L.

  • Author_Institution
    Univ. Nac. de La Plata, La Plata, Argentina
  • Volume
    11
  • Issue
    1
  • fYear
    2013
  • fDate
    Feb. 2013
  • Firstpage
    268
  • Lastpage
    273
  • Abstract
    In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 109 and 1013 p+/cm2. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications.
  • Keywords
    III-V semiconductors; elemental semiconductors; gallium arsenide; proton effects; silicon; solar cells; space power generation; GaAs; Si; electron volt energy 10 MeV; maximum power point; open circuit voltage; proton irradiation; short circuit current; solar cells; space application; space radiation; Gallium arsenide; Numerical analysis; Photovoltaic cells; Radiative recombination; Semiconductor device modeling; Silicon; device modeling; numerical simulation; proton radiation effects; solar cells;
  • fLanguage
    English
  • Journal_Title
    Latin America Transactions, IEEE (Revista IEEE America Latina)
  • Publisher
    ieee
  • ISSN
    1548-0992
  • Type

    jour

  • DOI
    10.1109/TLA.2013.6502815
  • Filename
    6502815
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=24732