Title :
Intrinsic stress in silicon nitride and silicon dioxide films prepared by various deposition techniques
Author :
Kanicki, J. ; Wagner, P. ; Karasinsk, J. ; Angilello, J.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Summary form only given. The mechanical stress caused by silicon nitride and silicon dioxide films on
Keywords :
CVD coatings; internal stresses; silicon compounds; 25 to 600 degC; RF power density; Si wafers; Si-Si/sub 3/N/sub 4/; Si-SiO/sub 2/; X-ray diffraction; chemical-vapor-deposition techniques; compressive stress; gas composition; intrinsic stress; mechanical stress; stress gage; substrate curvature; substrate temperature; tensile stress; thermal stress; Radio frequency; Semiconductor films; Silicon compounds; Stress measurement; Substrates; Temperature distribution; Tensile stress; Thermal stresses; X-ray diffraction;
Conference_Titel :
Electrical Insulation, 1988., Conference Record of the 1988 IEEE International Symposium on
Conference_Location :
Cambridge, MA, USA
DOI :
10.1109/ELINSL.1988.13891
