Simulation of electron and ion beam optics for high throughput lithography

Author

Zhu, X. ; Liu, H. ; Munro, E. ; Rouse, J.

Author_Institution

Munros Electron Beam Software Ltd., London, UK

fYear

2000

fDate

11-13 July 2000

Firstpage

134

Lastpage

135

Abstract

Several electron and ion beam systems are currently being developed as possible candidates for high-throughput next generation lithography ("NGL"). These include projection electron beam columns such as PREVAIL and SCALPEL ion beam projection systems, multi-beam and multi-column systems. The design and optimization of such systems requires a sophisticated and accurate simulation of the optical performance, including an analysis of the aberrations, Coulomb interaction effects and tolerancing requirements. We have developed a comprehensive range of software tools to assist in this design process.

Keywords

aberrations; electron beam lithography; electron optics; ion beam lithography; ion optics; semiconductor process modelling; Coulomb interactions; PREVAIL; SCALPEL; aberrations; computer simulation; design optimization; electron beam optics; high-throughput next generation lithography; ion beam optics; multi-beam system; multi-column system; projection system; software package; tolerancing; Analytical models; Design optimization; Electron beams; Electron optics; Ion beams; Lithography; Optical beams; Optical design; Particle beam optics; Throughput;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2000 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-004-6

Type

conf

DOI

10.1109/IMNC.2000.872658

Filename

872658