InP/InGaAs photodetector on SOI circuitry

Author

Binetti, P.R.A. ; Leijtens, X.J.M. ; de Vries, T. ; Oei, Y.S. ; Cioccio, L. Di ; Fedeli, J.M. ; Lagahe, C. ; Van Campenhout, J. ; Van Thourhout, D. ; van Veldhoven, P.J. ; Nötzel, R. ; Smit, M.K.

Author_Institution

COBRA Res. Inst., Tech. Univ. Eindhoven, Eindhoven, Netherlands

fYear

2009

fDate

9-11 Sept. 2009

Firstpage

214

Lastpage

216

Abstract

We present the design, fabrication and characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Measured detector responsivity and 3 dB bandwidth are 0.45 A/W and 33 GHz, respectively. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; membranes; optical design techniques; optical fabrication; optical interconnections; optical waveguides; photodetectors; InP-InGaAs; InP-based membrane photodetector; SOI circuitry; Si; Si-wiring photonic circuit; bandwidth 33 GHz; detector responsivity; electronic IC processing; optical interconnect layer; photodetector characterization; photodetector design; photodetector fabrication; photonic device fabrication; silicon waveguides; wafer scale processing; Bandwidth; Biomembranes; Detectors; Electromagnetic waveguides; Fabrication; Indium gallium arsenide; Indium phosphide; Integrated circuit interconnections; Optical waveguides; Photodetectors; InGaAs/InP; Optical Interconnects; Photodetector;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on

Conference_Location

San Francisco, CA

ISSN

1949-2081

Print_ISBN

978-1-4244-4402-1

Electronic_ISBN

1949-2081

Type

conf

DOI

10.1109/GROUP4.2009.5338390

Filename

5338390