Simulation of Coulomb interactions in electron projection lithography using scattering contrast

Author

Yamashita, H. ; Munro, E. ; Rouse, J. ; Nomura, E. ; Kobinata, H. ; Nakajima, K. ; Nozue, H.

Author_Institution

ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan

fYear

2000

fDate

11-13 July 2000

Firstpage

136

Lastpage

137

Abstract

Electron projection lithography (EPL), such as PREVAIL and SCALPEL, are among the candidates for next generation lithography. We modified the discrete Coulomb interaction simulator BOERSCH to be capable of incorporating the treatment of mask-scattered electrons into the simulation domain. Annular apertures of arbitrary number and size also can be set as the limiting aperture in addition to the usual round shape. Using this simulator, not only the resolution but also the performance of the SCALPEL GHOST proximity effect correction (PEC) can be evaluated. Therefore, this modified BOERSCH can provide almost perfect functions necessary for the EPL process development.

Keywords

electron beam lithography; proximity effect (lithography); semiconductor process modelling; BOERSCH; Coulomb interaction; GHOST; PREVAIL; SCALPEL; computer simulation; electron projection lithography; mask scattering contrast; next generation lithography; proximity effect correction; resolution; Apertures; Electron beams; Electron optics; Histograms; Laboratories; Lithography; National electric code; Optical scattering; Page description languages; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2000 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-004-6

Type

conf

DOI

10.1109/IMNC.2000.872659

Filename

872659