Innovative Buried Layer Rectifier with 0.1V ultralow forward conduction voltage

Author

Li, Zehong ; Ren, Min ; Zhang, Meng ; Yu, Shijiang ; Zhang, Jinping ; Zhang, Bo ; Li, Zhaoji

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China (UESTC), Chengdu, China

fYear

2012

fDate

3-7 June 2012

Firstpage

105

Lastpage

108

Abstract

A novel Buried Layer Rectifier (BLR) is proposed and demonstrated, which features P-layers buried under the N-channel to create a barrier for majority carriers whose height can be modulated by the anode voltage. The forward conduction voltage (V_F) is considerably reduced due to the ultra-low barrier. The buried P-layers also significantly enhance the blocking capability and reduce the leakage current. Experiments show that the novel 100-V BLR exhibits an ultra-low V_F of 0.1V and a fast reverse recovery time (T_rr) shorter than 20ns.

Keywords

buried layers; leakage currents; rectifiers; N-channel; P-layers; anode voltage; buried layer rectifier; leakage current; time 20 ns; ultralow forward conduction voltage; voltage 0.1 V; voltage 100 V; Anodes; Breakdown voltage; Doping; Electric breakdown; Junctions; Rectifiers; Schottky diodes; forward voltage drop; rectifier; reverse recovery; trade-off;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on

Conference_Location

Bruges

ISSN

1943-653X

Print_ISBN

978-1-4577-1594-5

Electronic_ISBN

1943-653X

Type

conf

DOI

10.1109/ISPSD.2012.6229034

Filename

6229034