DocumentCode
2473317
Title
Influence of electron density distribution at the electron source in a projection exposure system
Author
Kotera, M. ; Sakai, M. ; Shimizu, I. ; Tomo, Y. ; Yoshida, A. ; Kojima, Y. ; Yamabe, M.
Author_Institution
Osaka Inst. of Technol., Japan
fYear
2000
fDate
11-13 July 2000
Firstpage
140
Lastpage
141
Abstract
The exposure characteristics are largely influenced by the size of the electron source. The characteristics are also influenced by the electron density distribution at the source. In order to discuss these effects quantitatively, individual electron trajectory is traced in a realistic projection exposure optical system in the present study. Based on the results obtained above, the most preferable conditions on the electron source are clarified for the projection exposure system.
Keywords
electron beam lithography; electron density; electron optics; electron sources; electron beam lithography; electron density distribution; electron source; electron trajectory; projection exposure optical system; Apertures; Electron beams; Electron optics; Electron sources; Gaussian distribution; Lead compounds; Lenses; Lighting; Optical beams; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-004-6
Type
conf
DOI
10.1109/IMNC.2000.872662
Filename
872662
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