Reliability study of ONO gate film in high speed PTOx-TMOS based on electrical characteristics under high electric field

Author

Taktani, Eiichi ; Arakawa, Takafumi ; Aoki, Takaaki ; Ogino, Masahiro

Author_Institution

Semicond. Device R&D Div., DENSO Corp., Kariya, Japan

fYear

2012

fDate

3-7 June 2012

Firstpage

109

Lastpage

112

Abstract

The purpose of this study is to clarify the more reliable design for ONO Gate insulator film for Trench Gate MOSFET. Partially Thick Oxide Trench Gate MOSFET (PTOx-TMOS) with ONO Gate film can reduce the Ron*Qgd Figure of Merit on easy process and simple structure. However this structure is required the appropriate design to prevent threshold voltage shift originated in charge storage effect. In this study, charge storage mechanism is analyzed experimentally and theoretically with the Fowler-Nordheim and Direct-Tunneling electric conduction behavior in high electric field.

Keywords

MOSFET; semiconductor device reliability; semiconductor thin films; Direct-Tunneling electric conduction behavior; Fowler-Nordheim electric conduction behavior; ONO gate film; ONO gate insulator film; charge storage effect; electrical characteristics; figure of merit; high electric field; high speed PTOx-TMOS; reliability study; trench gate MOSFET; Charge carrier processes; Electric fields; Insulators; Logic gates; MOSFET circuits; Reliability; Silicon compounds; Fowler-Nordheim current; ONO gate; Reliability study; Trench gate MOSFET; charge storage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on

Conference_Location

Bruges

ISSN

1943-653X

Print_ISBN

978-1-4577-1594-5

Electronic_ISBN

1943-653X

Type

conf

DOI

10.1109/ISPSD.2012.6229035

Filename

6229035