Lasing of the III/V compound semiconductor Ga(NAsP) integrated lattice-matched to Si substrate

Author

Kunert, B. ; Liebich, S. ; Zimprich, M. ; Zinnkann, S. ; Fritz, R. ; Volz, K. ; Stolz, W. ; Lange, C. ; Köster, N.S. ; Chatterjee, S. ; Rühle, W.W. ; Gerhardt, N.C. ; Koukourakis, N. ; Hofmann, M.

Author_Institution

NAsP III/V GmbH, Marburg, Germany

fYear

2009

fDate

9-11 Sept. 2009

Firstpage

199

Lastpage

201

Abstract

Ga(NAsP) multi quantum well heterostructures were grown pseudomorphically on exactly oriented (001) silicon substrates without the formation of misfit dislocations. Optical pumped lasing operation was observed at temperatures up to 125 K.

Keywords

III-V semiconductors; dislocations; gallium arsenide; gallium compounds; integrated optics; integrated optoelectronics; optical pumping; quantum well lasers; Ga(NAsP); III-V compound semiconductor; Si; Si substrate; integrated lattice-matching; misfit dislocations; multiquantum well heterostructures; optical pumped lasing operation; optoelectronic integrated circuits; pseudomorphic growth; semiconductor lasing; Diode lasers; Lattices; Optical materials; Photonic band gap; Photonic integrated circuits; Physics; Semiconductor materials; Silicon; Substrates; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on

Conference_Location

San Francisco, CA

ISSN

1949-2081

Print_ISBN

978-1-4244-4402-1

Electronic_ISBN

1949-2081

Type

conf

DOI

10.1109/GROUP4.2009.5338394

Filename

5338394