Title :
Lasing of the III/V compound semiconductor Ga(NAsP) integrated lattice-matched to Si substrate
Author :
Kunert, B. ; Liebich, S. ; Zimprich, M. ; Zinnkann, S. ; Fritz, R. ; Volz, K. ; Stolz, W. ; Lange, C. ; Köster, N.S. ; Chatterjee, S. ; Rühle, W.W. ; Gerhardt, N.C. ; Koukourakis, N. ; Hofmann, M.
Author_Institution :
NAsP III/V GmbH, Marburg, Germany
Abstract :
Ga(NAsP) multi quantum well heterostructures were grown pseudomorphically on exactly oriented (001) silicon substrates without the formation of misfit dislocations. Optical pumped lasing operation was observed at temperatures up to 125 K.
Keywords :
III-V semiconductors; dislocations; gallium arsenide; gallium compounds; integrated optics; integrated optoelectronics; optical pumping; quantum well lasers; Ga(NAsP); III-V compound semiconductor; Si; Si substrate; integrated lattice-matching; misfit dislocations; multiquantum well heterostructures; optical pumped lasing operation; optoelectronic integrated circuits; pseudomorphic growth; semiconductor lasing; Diode lasers; Lattices; Optical materials; Photonic band gap; Photonic integrated circuits; Physics; Semiconductor materials; Silicon; Substrates; Temperature dependence;
Conference_Titel :
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4402-1
Electronic_ISBN :
1949-2081
DOI :
10.1109/GROUP4.2009.5338394
