Title :
Modeling of mid-IR type-II interband cascade lasers
Author :
Mu, Yao-Ming ; Yang, Rui Q.
Author_Institution :
Space Vacuum Epitaxy Center, Houston Univ., TX, USA
Abstract :
Summary form only given. We report calculations of band structures, optical gain, and threshold current density in mid-IR type-II interband cascade lasers. Implications of the calculated results will be discussed in connection with device performance. Our calculations are based on Kane´s eight-band k.p model with envelope wavefunction approximation and strain effects included. The band structures for InAs-GaInSb-AlSb QW active region in a type-II interband cascade laser at 80 K and 300 K are computed with a constant electric field F
Keywords :
III-V semiconductors; aluminium compounds; band structure; gallium compounds; indium compounds; infrared sources; laser theory; quantum well lasers; semiconductor device models; 300 K; 80 K; InAs-GaInSb-AlSb; InAs-GaInSb-AlSb QW active region; Kane´s eight-band k.p model; band structures; constant electric field; device performance; envelope wavefunction approximation; mid-IR type-II interband cascade laser modelling; mid-IR type-II interband cascade lasers; optical gain; strain effects; threshold current density; type-II interband cascade laser; Current density; Elementary particle vacuum; Laser transitions; Optical losses; Optical materials; Optical scattering; Particle scattering; Quantum cascade lasers; Stimulated emission; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.739624
