Design considerations on low voltage synchronous power MOSFETs with monolithically integrated gate voltage pull-down circuitry

In this paper, a monolithically integrated gate voltage pull-down circuitry is presented to avoid the unintentional C·dV/dt induced turn-on. The concept of a low threshold voltage MOSFET with this integrated gate voltage pull-down circuitry is introduced as a contributing factor to the next generation high frequency DC-DC converter efficiency improvement. Design considerations on this new device and influences of critical design parameters on device/circuit performance will be fully discussed. In synchronous buck application, this integrated power module achieves more than 2% efficiency improvement over reference solution at high operation frequency (1MHz) under 19V input and 1.3V output condition.