Title :
Using zero thermal coefficient point property for VDMOS power devices health monitoring
Author :
Marcault, E. ; Bourennane, A. ; Breil, M. ; Tounsi, P. ; Dupuy, P.
Author_Institution :
LAAS, Toulouse, France
Abstract :
This paper deals with the power assembly failure anticipation by monitoring its mechanical state. From this perspective, we evaluate the impact of mechanical stress accumulation before crack opening on the electrical characteristics of a VDMOS transistor using 2D physical simulations. The power device I(V) characteristics depend both on temperature and mechanical stress. To estimate the impact of mechanical stress on the VDMOS I(V) characteristics, we exploit the VDMOS Zero Thermal Coefficient operating point. At this operating point, the VDMOS I(V) characteristics are temperature independent.
Keywords :
power MOSFET; semiconductor device reliability; thermal stresses; 2D physical simulations; VDMOS power devices; crack opening; health monitoring; mechanical state; mechanical stress accumulation; power assembly failure anticipation; temperature stress; zero thermal coefficient operating point; Computational modeling; Soldering; Stress; Temperature; Temperature measurement; Thermal stresses; VDMOS transistor; mechanical stress; reliability; temperature;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2012.6229041
