3D thermoelectric structures derived from a new mixed micromachining process

Author

Du, Chen-Hsun ; Lee, Chengkuo

Author_Institution

Metrodyne Microsyst. Corp., Hsinchu, Taiwan

fYear

2000

fDate

11-13 July 2000

Firstpage

150

Lastpage

151

Abstract

This paper presents an innovative two-level thermoelectric structure which significantly reduce the component size without deterioration of sensor performance. Based on CMOS compatible process, this two-level thermoelectric structure is demonstrated and fabricated by combining front-side silicon anisotropic wet etching and aluminum sacrificial layer etching technique. The voltage responsivity of derived thermopile with 300/spl times/300 /spl mu/m/sup 2/ pixel size can be as high as 162 V/W in vacuum. This new thermoelectric structure shows its potential to be an excellent pixel structure of infrared sensor array for security application.

Keywords

etching; micromachining; microsensors; thermopiles; 3D thermoelectric structure; Al; CMOS process; Si; aluminum sacrificial layer etching; front-side silicon anisotropic wet etching; infrared sensor array; mixed micromachining; pixel structure; security applications; thermal sensor; thermopile; voltage responsivity; Aluminum; Anisotropic magnetoresistance; CMOS process; Infrared sensors; Sensor arrays; Silicon; Thermal sensors; Thermoelectricity; Voltage; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2000 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-004-6

Type

conf

DOI

10.1109/IMNC.2000.872669

Filename

872669