Making a bridge from SJ-MOSFET to IGBT via RC-IGBT structure Concept for 600V class SJ-RC-IGBT in a single chip solution

Through the simulation, a concept for the next generation MOSFET or IGBT as a single chip solution by combining Super Junction MOSFET (SJ-MOSFET) with Reverse Conducting IGBT (RC-IGBT) is presented. Since the MOSFET´s fundamental trade-off relationship between Ron,sp and turn-off loss Eoff is much better than IGBT´s, we focus how to push up a connection collector current density Jconnect where SJ MOSFET´s output I-V curve touches the IGBT´s one and found out the good combination for an N-drift and an N-buffer. This proposed device has an enough Unclamped Inductive Switching (UIS) capability as the SJ-MOSFET´s SOA and acceptable dynamic characteristics as the IGBT or the FWD.