Title :
0.8-5.2 GHz band SiGe-MMIC Q-MIX for a multi-band multi-mode direct conversion receiver
Author :
Kageyama, Chiemi ; Nakajima, Kensuke ; Tsutsumi, Kouji ; Taniguchi, Eiji ; Shimozawa, Mitsuhiro ; Suematsu, Noriharu
Author_Institution :
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kanagawa, Japan
Abstract :
By employing a 14 GHz static frequency divider and broadband SiGe-HBT unit mixers, a 0.8-5.2 GHz band Q-MIX is developed using a 0.35 μm SiGe BiCMOS process. The fabricated Q-MIX has constant conversion gain (Gc) over the wide baseband (BB) frequency range up to 100 MHz and performs good I/Q balance (<0.17 dB, <3.6 degrees) over the wide RF frequency range of 0.8-5.2 GHz.
Keywords :
4G mobile communication; BiCMOS integrated circuits; Ge-Si alloys; MMIC frequency convertors; MMIC mixers; frequency dividers; heterojunction bipolar transistors; radio receivers; software radio; 0.35 micron; 0.8 to 5.2 GHz; 14 GHz; 4th generation mobile communication; BiCMOS process; HBT unit mixers; I/Q balance; SDR; Si-Ge; SiGe-MMIC Q-MIX; constant conversion gain; multi-band direct conversion receiver; multi-mode direct conversion receiver; software defined radio; static frequency divider; Circuit simulation; Frequency conversion; Germanium silicon alloys; Heterojunction bipolar transistors; Mixers; Power dividers; Radio frequency; Receivers; Silicon germanium; Wideband;
Conference_Titel :
Radio and Wireless Conference, 2004 IEEE
Print_ISBN :
0-7803-8451-2
DOI :
10.1109/RAWCON.2004.1389110
