DocumentCode
2473503
Title
Dose and shape modification proximity effect correction for forward-scattering range scale features in electron beam lithography
Author
Seo, Eunsung ; Kim, Ohyun
Author_Institution
Pohang Inst. of Sci. & Technol., South Korea
fYear
2000
fDate
11-13 July 2000
Firstpage
158
Lastpage
159
Abstract
We propose a dose and shape modification proximity effect correction (PEC) for forward-scattering range scale features in electron beam lithography (EBL). An existing dose modification PEC provides good results for the features of size larger than 2/spl alpha/ or 3/spl alpha/ (/spl alpha/ is forward-scattering range parameter). For the forward-scattering range scale features, exposure contrast has too small a value to delineate the features. To delineate the forward-scattering range scale features, the exposure contrast should be increased by using shape modification. In the case of existing dose and shape modification PECs or Hybrid PECs, additional computation time-consuming back-scatter correction is required, or those PECs with large features make additional back-scatter correction unnecessary. Accordingly, for forward-scattering range scale features, we propose a dose and shape modification PEC in which the additional computation time-consuming back-scatter correction is unnecessary.
Keywords
electron beam lithography; proximity effect (lithography); dose modification; electron beam lithography; exposure contrast; forward scattering range scale features; proximity effect correction; shape modification; Acceleration; Ambient intelligence; Computational modeling; Electron beams; Flowcharts; Lithography; Proximity effect; Scattering; Shape; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-004-6
Type
conf
DOI
10.1109/IMNC.2000.872675
Filename
872675
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