Title :
The temperature dependency of a GaAs pHEMT wideband IQ modulator IC
Author_Institution :
TRDA, San Diego, CA, USA
Abstract :
The author developed a GaAs wideband IQ modulator IC, which is utilized in Agilent RF signal source instruments. The layout is fully symmetric to obtain a temperature-stable operation. However, the actual temperature drift performance is poorer in some frequency ranges than the first generation of IC which has the same architecture. This paper presents the temperature drift of SSB performance and clarifies that the temperature dependency of equivalent series impedance dominates the quadrature phase shift.
Keywords :
HEMT integrated circuits; electric impedance; gallium arsenide; microwave integrated circuits; microwave phase shifters; modulators; temperature measurement; Agilent RF signal source instruments; GaAs; SSB performance; equivalent series impedance; fully symmetric layout; pHEMT; quadrature phase shift; temperature dependency; temperature drift performance; temperature-stable operation; wideband IQ modulator IC; Amplitude modulation; Frequency; Gallium arsenide; Impedance; Instruments; PHEMTs; Radiofrequency integrated circuits; Temperature dependence; Temperature distribution; Wideband;
Conference_Titel :
Radio and Wireless Conference, 2004 IEEE
Print_ISBN :
0-7803-8451-2
DOI :
10.1109/RAWCON.2004.1389113
