Title :
Universal trench edge termination design
Author :
Seto, Kota ; Kamibaba, Ryu ; Tsukuda, Masanori ; Omura, Ichiro
Author_Institution :
Kyushu Inst. of Technol., Kitakyushu, Japan
Abstract :
The minimum edge termination length for various trench structure is theoretically determined to obtain universal curve for efficient design under considering trade-off relation with trench fabrication difficulty, cost and limitation specially for thin wafer IGBTs and diodes. This study unveils for the first time clear relationship between trench depth and termination length. We present practical design for each trench depth based on design curve considering trench filler material.
Keywords :
insulated gate bipolar transistors; semiconductor diodes; design curve; diodes; minimum edge termination length; thin wafer IGBT; trench depth; trench fabrication; trench filler material; trench structure; universal curve; universal trench edge termination design; Dielectric constant; Electric fields; Guidelines; Junctions; Materials; PIN photodiodes; Structural rings; T-CAD simulation; breakdown voltage; trench edge termination;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2012.6229048
