DocumentCode
2473569
Title
Universal trench edge termination design
Author
Seto, Kota ; Kamibaba, Ryu ; Tsukuda, Masanori ; Omura, Ichiro
Author_Institution
Kyushu Inst. of Technol., Kitakyushu, Japan
fYear
2012
fDate
3-7 June 2012
Firstpage
161
Lastpage
164
Abstract
The minimum edge termination length for various trench structure is theoretically determined to obtain universal curve for efficient design under considering trade-off relation with trench fabrication difficulty, cost and limitation specially for thin wafer IGBTs and diodes. This study unveils for the first time clear relationship between trench depth and termination length. We present practical design for each trench depth based on design curve considering trench filler material.
Keywords
insulated gate bipolar transistors; semiconductor diodes; design curve; diodes; minimum edge termination length; thin wafer IGBT; trench depth; trench fabrication; trench filler material; trench structure; universal curve; universal trench edge termination design; Dielectric constant; Electric fields; Guidelines; Junctions; Materials; PIN photodiodes; Structural rings; T-CAD simulation; breakdown voltage; trench edge termination;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location
Bruges
ISSN
1943-653X
Print_ISBN
978-1-4577-1594-5
Electronic_ISBN
1943-653X
Type
conf
DOI
10.1109/ISPSD.2012.6229048
Filename
6229048
Link To Document