DocumentCode :
2473601
Title :
Proposal of atom lithography for silicon quantum dots
Author :
Asakawa, Y. ; Kumagai, H. ; Midorikawa, Katsumi ; Obara, M.
Author_Institution :
Fac. of Sci. & Technol., Keio Univ., Yokohama, Japan
fYear :
2000
fDate :
11-13 July 2000
Firstpage :
168
Lastpage :
169
Abstract :
Recently so called "atom lithography", which makes the most use of atom deposition techniques with an optical mask, has been studied. This technique has been enable to fabricate nanometer-size structure. To apply this technique to silicon, it is necessary to develop the laser system that emits deep ultraviolet light resonant to it.
Keywords :
elemental semiconductors; nanotechnology; photolithography; semiconductor quantum dots; silicon; Si; Si quantum dots; atom deposition techniques; atom lithography; nanometer-size structure; optical mask; Atom optics; Atomic beams; Atomic layer deposition; Lithography; Nanostructures; Proposals; Quantum dot lasers; Quantum dots; Silicon; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
Type :
conf
DOI :
10.1109/IMNC.2000.872683
Filename :
872683
Link To Document :
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