Nitride lasers on SiC substrates

Author

Bulman, G.E. ; Doverspike, K. ; Haberern, K. ; Dieringer, H. ; Kong, H.S. ; Edmond, J. ; Song, Y.K. ; Kuball, M. ; Nurmikko, A.

Author_Institution

Cree Res. Inc., Durham, NC, USA

Volume

2

fYear

1998

fDate

3-4 Dec 1998

Firstpage

348

Abstract

Laser diode (LD) structures were fabricated by metal-organic chemical vapor deposition (MOCVD) from the AlN-InN-GaN system on single crystal 6H-SiC substrates. A conducting buffer layer was developed for these devices which uses an AlGaN buffer layer and provides a conduction path between SiC substrate and the active device region. Violet and blue multiple quantum well (MQW) separate confinement heterojunction (SCH) LDs were fabricated having InGaN wells and GaN barriers. The lowest pulsed operation threshold current density obtained for lasing was 7.1 kA/cm² in a 4-well structure

Keywords

III-V semiconductors; MOCVD; current density; gallium compounds; indium compounds; optical fabrication; quantum well lasers; 4-well structure; AlGaN; AlGaN buffer layer; AlN-InN-GaN; AlN-InN-GaN system; GaN; GaN barriers; InGaN; InGaN blue MQW separate confinement heterojunction laser diodes; InGaN wells; MOCVD; SiC; SiC substrate; SiC substrates; active device region; conducting buffer layer; conduction path; laser diode structures; lowest pulsed operation threshold current density; metal-organic chemical vapor deposition; nitride lasers; single crystal 6H-SiC substrates; Aluminum gallium nitride; Buffer layers; Chemical lasers; Chemical vapor deposition; Diode lasers; Heterojunctions; MOCVD; Pulsed laser deposition; Quantum well devices; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.739705

Filename

739705